NTMS5P02R2G

MOSFET P-CH 20V 3.95A 8-SOIC
NTMS5P02R2G P1
NTMS5P02R2G P1
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ON Semiconductor ~ NTMS5P02R2G

Part Number
NTMS5P02R2G
Manufacturer
ON Semiconductor
Description
MOSFET P-CH 20V 3.95A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTMS5P02R2G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 5000 pcs
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Product Parameter

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Part Number NTMS5P02R2G
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.95A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 790mW (Ta)
Rds On (Max) @ Id, Vgs 33 mOhm @ 5.4A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)

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