NTJD1155LT1G

MOSFET N/P-CH 8V 1.3A SOT-363
NTJD1155LT1G P1
NTJD1155LT1G P1
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ON Semiconductor ~ NTJD1155LT1G

Part Number
NTJD1155LT1G
Manufacturer
ON Semiconductor
Description
MOSFET N/P-CH 8V 1.3A SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTJD1155LT1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number NTJD1155LT1G
Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 175 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 400mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363

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