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See Product Specifications for product details.
Part Number | NTHD2110TT1G |
---|---|
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1072pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1.1W (Ta) |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 6.4A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ChipFET™ |
Package / Case | 8-SMD, Flat Lead |