NTD3808NT4G

MOSFET N-CH 16V 12A DPAK
NTD3808NT4G P1
NTD3808NT4G P1
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ON Semiconductor ~ NTD3808NT4G

Part Number
NTD3808NT4G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 16V 12A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NTD3808NT4G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NTD3808NT4G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 16V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 76A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 12V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 1.3W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs 5.8 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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