NDDL01N60Z-1G

MOSFET N-CH 600V 0.8A IPAK
NDDL01N60Z-1G P1
NDDL01N60Z-1G P1
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ON Semiconductor ~ NDDL01N60Z-1G

Part Number
NDDL01N60Z-1G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 600V 0.8A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NDDL01N60Z-1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 8775 pcs
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Product Parameter

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Part Number NDDL01N60Z-1G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 92pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 26W (Tc)
Rds On (Max) @ Id, Vgs 15 Ohm @ 400mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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