MVSF2N02ELT1G

MOSFET N-CH 20V 2.8A SOT23
MVSF2N02ELT1G P1
MVSF2N02ELT1G P1
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ON Semiconductor ~ MVSF2N02ELT1G

Part Number
MVSF2N02ELT1G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 20V 2.8A SOT23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MVSF2N02ELT1G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 153000 pcs
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Product Parameter

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Part Number MVSF2N02ELT1G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Rds On (Max) @ Id, Vgs 85 mOhm @ 3.6A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3

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