ATP218-TL-H

MOSFET N-CH 30V 100A ATPAK
ATP218-TL-H P1
ATP218-TL-H P1
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ON Semiconductor ~ ATP218-TL-H

Part Number
ATP218-TL-H
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 30V 100A ATPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- ATP218-TL-H PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number ATP218-TL-H
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 10V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 50A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package ATPAK
Package / Case ATPAK (2 leads+tab)

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