Images are for reference only.
See Product Specifications for product details.
| Part Number | 2SJ665-DL-E |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Rds On (Max) @ Id, Vgs | 77 mOhm @ 14A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SMP-FD |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
2SJ600-Z-E1-AZ | Renesas Electronics America | TRANSISTOR | - | 6321 | Details |
|
2SJ601(0)-Z-E1-AZ | Renesas Electronics America | TRANSISTOR | - | 6321 | Details |
 |
2SJ610(TE16L1,NQ) | Toshiba Semiconductor and Storage | MOSFET P-CH 250V 2A PW-MOLD | 0 | Details | |
|
2SJ648-T1-A | Renesas Electronics America | TRANSISTOR | - | 6316 | Details |
|
2SJ649-AZ | Renesas Electronics America | MOSFET P-CH 60V 20A TO-220 | - | 0 | Details |
 |
2SJ652 | ON Semiconductor | MOSFET P-CH 60V 28A TO-220ML | - | 0 | Details |
 |
2SJ652-1E | ON Semiconductor | MOSFET P-CH 60V 28A TO-220FP-3 | - | 605 | Details |
|
2SJ652-1EX | ON Semiconductor | MOSFET P-CH TO-220FP-3 | - | 0 | Details |
 |
2SJ652-RA11 | ON Semiconductor | MOSFET P-CH 60V 28A TO-220ML | - | 0 | Details |
 |
2SJ656 | ON Semiconductor | MOSFET P-CH 100V 18A TO-220ML | 0 | Details | |
|
2SJ661-1E | ON Semiconductor | MOSFET P-CH 60V 38A | - | 0 | Details |
|
2SJ661-1EX | ON Semiconductor | MOSFET P-CH I2PAK | - | 0 | Details |