Images are for reference only.
See Product Specifications for product details.
| Part Number | 2SJ652-1E |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360pF @ 20V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 38 mOhm @ 14A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3SG |
| Package / Case | TO-220-3 Full Pack |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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2SJ304(F) | Toshiba Semiconductor and Storage | MOSFET P-CH 60V 14A TO220NIS | 0 | Details | |
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2SJ305TE85LF | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 0.2A S-MINI | - | 0 | Details |