PHT11N06LT,135

MOSFET N-CH 55V 4.9A SOT223
PHT11N06LT,135 P1
PHT11N06LT,135 P2
PHT11N06LT,135 P1
PHT11N06LT,135 P2
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NXP USA Inc. ~ PHT11N06LT,135

Part Number
PHT11N06LT,135
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 55V 4.9A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- PHT11N06LT,135 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number PHT11N06LT,135
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Vgs (Max) ±13V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 5A, 5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA

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