BUK9E1R9-40E,127

MOSFET N-CH 40V I2PAK
BUK9E1R9-40E,127 P1
BUK9E1R9-40E,127 P1
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NXP USA Inc. ~ BUK9E1R9-40E,127

Part Number
BUK9E1R9-40E,127
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 40V I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BUK9E1R9-40E,127 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BUK9E1R9-40E,127
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) -
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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