Images are for reference only.
See Product Specifications for product details.
| Part Number | BAS16VV,115 |
|---|---|
| Part Status | Active |
| Diode Configuration | 3 Independent |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 500nA @ 80V |
| Operating Temperature - Junction | 150°C (Max) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BAS116 | Diodes Incorporated | DIODE GEN PURP 85V 215MA SOT23-3 | - | 0 | Details |
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BAS116 RFG | Taiwan Semiconductor Corporation | DIODE GEN PURP 75V 200MA SOT23 | - | 1546376 | Details |
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BAS116,215 | Nexperia USA Inc. | DIODE GEN PURP 75V 215MA SOT23 | 9000 | Details | |
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BAS116,235 | Nexperia USA Inc. | DIODE GEN PURP 75V 215MA SOT23 | 90000 | Details | |
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BAS116-7-F | Diodes Incorporated | DIODE GEN PURP 85V 215MA SOT23-3 | - | 0 | Details |
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BAS116E6327HTSA1 | Infineon Technologies | DIODE GEN PURP 80V 250MA SOT23-3 | - | 42000 | Details |
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BAS116E6433HTMA1 | Infineon Technologies | DIODE GEN PURP 80V 250MA SOT23-3 | - | 0 | Details |
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BAS116GWJ | Nexperia USA Inc. | BAS116GW/SOD123/SOD2 | - | 10000 | Details |
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BAS116GWX | Nexperia USA Inc. | BAS116GW/SOD123/SOD2 | - | 3000 | Details |
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BAS116H,115 | Nexperia USA Inc. | DIODE GEN PURP 75V 215MA SOD123F | 33000 | Details |