MDS60L

TRANS RF BIPO 120W 4A 55AW1
MDS60L P1
MDS60L P1
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Microsemi Corporation ~ MDS60L

Part Number
MDS60L
Manufacturer
Microsemi Corporation
Description
TRANS RF BIPO 120W 4A 55AW1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MDS60L PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
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Product Parameter

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Part Number MDS60L
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f) -
Gain 10dB
Power - Max 120W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V
Current - Collector (Ic) (Max) 4A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case 55AW
Supplier Device Package 55AW

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