APTM20UM09SG

MOSFET N-CH 200V 195A J3
APTM20UM09SG P1
APTM20UM09SG P1
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Microsemi Corporation ~ APTM20UM09SG

Part Number
APTM20UM09SG
Manufacturer
Microsemi Corporation
Description
MOSFET N-CH 200V 195A J3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
APTM20UM09SG.pdf APTM20UM09SG PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number APTM20UM09SG
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 195A
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 217nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 12300pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 780W (Tc)
Rds On (Max) @ Id, Vgs 9 mOhm @ 74.5A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package Module
Package / Case J3 Module

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