APT33GF120LRDQ2G

IGBT 1200V 64A 357W TO264
APT33GF120LRDQ2G P1
APT33GF120LRDQ2G P2
APT33GF120LRDQ2G P1
APT33GF120LRDQ2G P2
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Microsemi Corporation ~ APT33GF120LRDQ2G

Part Number
APT33GF120LRDQ2G
Manufacturer
Microsemi Corporation
Description
IGBT 1200V 64A 357W TO264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- APT33GF120LRDQ2G PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number APT33GF120LRDQ2G
Part Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 64A
Current - Collector Pulsed (Icm) 75A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Power - Max 357W
Switching Energy 1.315mJ (on), 1.515mJ (off)
Input Type Standard
Gate Charge 170nC
Td (on/off) @ 25°C 14ns/185ns
Test Condition 800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Supplier Device Package TO-264 [L]

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