APT100GN60B2G

IGBT 600V 229A 625W TMAX
APT100GN60B2G P1
APT100GN60B2G P1
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Microsemi Corporation ~ APT100GN60B2G

Part Number
APT100GN60B2G
Manufacturer
Microsemi Corporation
Description
IGBT 600V 229A 625W TMAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- APT100GN60B2G PDF online browsing
Family
Transistors - IGBTs - Single
  • In Stock : 81 pcs
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Product Parameter

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Part Number APT100GN60B2G
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 229A
Current - Collector Pulsed (Icm) 300A
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 100A
Power - Max 625W
Switching Energy 4.7mJ (on), 2.675mJ (off)
Input Type Standard
Gate Charge 600nC
Td (on/off) @ 25°C 31ns/310ns
Test Condition 400V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package -

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