1N6081US

DIODE GEN PURP 150V 2A G-MELF
1N6081US P1
1N6081US P1
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Microsemi Corporation ~ 1N6081US

Part Number
1N6081US
Manufacturer
Microsemi Corporation
Description
DIODE GEN PURP 150V 2A G-MELF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
1N6081US.pdf 1N6081US PDF online browsing
Family
Diodes - Rectifiers - Single
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Product Parameter

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Part Number 1N6081US
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 150V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 1.5V @ 37.7A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30ns
Current - Reverse Leakage @ Vr 10µA @ 150V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case SQ-MELF, G
Supplier Device Package G-MELF (D-5C)
Operating Temperature - Junction -65°C ~ 155°C

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