MMIX1T550N055T2

MOSFET N-CH 55V 550A SMPD
MMIX1T550N055T2 P1
MMIX1T550N055T2 P1
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IXYS ~ MMIX1T550N055T2

Part Number
MMIX1T550N055T2
Manufacturer
IXYS
Description
MOSFET N-CH 55V 550A SMPD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
MMIX1T550N055T2.pdf MMIX1T550N055T2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number MMIX1T550N055T2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 550A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 595nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 40000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 830W (Tc)
Rds On (Max) @ Id, Vgs 1.3 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 24-SMPD
Package / Case 24-PowerSMD, 21 Leads

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