IXTA1N200P3HV

MOSFET N-CH 2000V 1A TO-263HV
IXTA1N200P3HV P1
IXTA1N200P3HV P1
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IXYS ~ IXTA1N200P3HV

Part Number
IXTA1N200P3HV
Manufacturer
IXYS
Description
MOSFET N-CH 2000V 1A TO-263HV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IXTA1N200P3HV.pdf IXTA1N200P3HV PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 90 pcs
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Product Parameter

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Part Number IXTA1N200P3HV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 40 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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