IXTA110N055T7

MOSFET N-CH 55V 110A TO-263-7
IXTA110N055T7 P1
IXTA110N055T7 P1
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IXYS ~ IXTA110N055T7

Part Number
IXTA110N055T7
Manufacturer
IXYS
Description
MOSFET N-CH 55V 110A TO-263-7
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTA110N055T7 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXTA110N055T7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Rds On (Max) @ Id, Vgs 7 mOhm @ 25A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7 (IXTA..7)
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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