IXFV30N60P

MOSFET N-CH 600V 30A PLUS220
IXFV30N60P P1
IXFV30N60P P1
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IXYS ~ IXFV30N60P

Part Number
IXFV30N60P
Manufacturer
IXYS
Description
MOSFET N-CH 600V 30A PLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFV30N60P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFV30N60P
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Rds On (Max) @ Id, Vgs 240 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab

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