IXFT7N90Q

MOSFET N-CH 900V 7A TO-268
IXFT7N90Q P1
IXFT7N90Q P1
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IXYS ~ IXFT7N90Q

Part Number
IXFT7N90Q
Manufacturer
IXYS
Description
MOSFET N-CH 900V 7A TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFT7N90Q PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFT7N90Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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