IXFT320N10T2

MOSFET N-CH 100V 320A TO-26
IXFT320N10T2 P1
IXFT320N10T2 P1
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IXYS ~ IXFT320N10T2

Part Number
IXFT320N10T2
Manufacturer
IXYS
Description
MOSFET N-CH 100V 320A TO-26
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IXFT320N10T2.pdf IXFT320N10T2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFT320N10T2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 320A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1000W (Tc)
Rds On (Max) @ Id, Vgs 3.5 mOhm @ 100A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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