IXFT23N80Q

MOSFET N-CH 800V 23A TO-268(D3)
IXFT23N80Q P1
IXFT23N80Q P1
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IXYS ~ IXFT23N80Q

Part Number
IXFT23N80Q
Manufacturer
IXYS
Description
MOSFET N-CH 800V 23A TO-268(D3)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFT23N80Q PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFT23N80Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Rds On (Max) @ Id, Vgs 420 mOhm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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