SPD07N20GBTMA1

MOSFET N-CH 200V 7A TO252
SPD07N20GBTMA1 P1
SPD07N20GBTMA1 P1
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Infineon Technologies ~ SPD07N20GBTMA1

Part Number
SPD07N20GBTMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 200V 7A TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SPD07N20GBTMA1.pdf SPD07N20GBTMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number SPD07N20GBTMA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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