IPW60R055CFD7XKSA1

HIGH POWERNEW
IPW60R055CFD7XKSA1 P1
IPW60R055CFD7XKSA1 P1
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Infineon Technologies ~ IPW60R055CFD7XKSA1

Part Number
IPW60R055CFD7XKSA1
Manufacturer
Infineon Technologies
Description
HIGH POWERNEW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPW60R055CFD7XKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 5818 pcs
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Product Parameter

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Part Number IPW60R055CFD7XKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 55 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3194pF @ 400V
FET Feature -
Power Dissipation (Max) 178W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3

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