Images are for reference only.
See Product Specifications for product details.
| Part Number | IPU80R1K2P7AKMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IPU80R1K0CEAKMA1 | Infineon Technologies | MOSFET N-CH 800V TO251-3 | 0 | Details | |
 |
IPU80R1K0CEBKMA1 | Infineon Technologies | MOSFET N-CH 800V 5.7A TO251-3 | 0 | Details | |
 |
IPU80R1K2P7AKMA1 | Infineon Technologies | MOSFET N-CH 800V COOLMOS TO251-3 | - | 0 | Details |
 |
IPU80R1K4CEAKMA1 | Infineon Technologies | MOSFET N-CH 800V TO251-3 | 0 | Details | |
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IPU80R1K4CEBKMA1 | Infineon Technologies | MOSFET N-CH 800V 3.9A TO251-3 | 0 | Details | |
 |
IPU80R1K4P7AKMA1 | Infineon Technologies | MOSFET N-CH 800V 4A IPAK | 450 | Details | |
|
IPU80R2K0P7AKMA1 | Infineon Technologies | MOSFET N-CH 800V COOLMOS TO251-3 | - | 0 | Details |
|
IPU80R2K4P7AKMA1 | Infineon Technologies | MOSFET N-CH 800V COOLMOS TO251-3 | - | 0 | Details |
 |
IPU80R2K8CEAKMA1 | Infineon Technologies | MOSFET N-CH 800V TO251-3 | 0 | Details | |
 |
IPU80R2K8CEBKMA1 | Infineon Technologies | MOSFET N-CH 800V 1.9A TO251-3 | 0 | Details | |
|
IPU80R3K3P7AKMA1 | Infineon Technologies | MOSFET N-CH 800V COOLMOS TO251-3 | - | 0 | Details |
 |
IPU80R4K5P7AKMA1 | Infineon Technologies | MOSFET N-CH 800V 1.5A IPAK | 1477 | Details |