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See Product Specifications for product details.
Part Number | IPP65R074C6XKSA1 |
---|---|
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 57.7A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.4mA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3020pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 480.8W (Tc) |
Rds On (Max) @ Id, Vgs | 74 mOhm @ 13.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |