IPP50R500CE

MOSFET N-CH 500V 7.6A PG-TO220
IPP50R500CE P1
IPP50R500CE P1
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Infineon Technologies ~ IPP50R500CE

Part Number
IPP50R500CE
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 500V 7.6A PG-TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPP50R500CE.pdf IPP50R500CE PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 205 pcs
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Product Parameter

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Part Number IPP50R500CE
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 18.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 433pF @ 100V
Vgs (Max) ±20V
FET Feature Super Junction
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 500 mOhm @ 2.3A, 13V
Operating Temperature -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3

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