IPI26CNE8N G

MOSFET N-CH 85V 35A TO262-3
IPI26CNE8N G P1
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IPI26CNE8N G P3
IPI26CNE8N G P1
IPI26CNE8N G P2
IPI26CNE8N G P3
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Infineon Technologies ~ IPI26CNE8N G

Part Number
IPI26CNE8N G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 85V 35A TO262-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPI26CNE8N G.pdf IPI26CNE8N G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPI26CNE8N G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Rds On (Max) @ Id, Vgs 26 mOhm @ 35A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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