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See Product Specifications for product details.
Part Number | IPD60R2K1CEBTMA1 |
---|---|
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 22W (Tc) |
Rds On (Max) @ Id, Vgs | 2.1 Ohm @ 760mA, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |