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See Product Specifications for product details.
| Part Number | IPD5N25S3430ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 13µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 422pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
IPD5N25S3430ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | 0 | Details |