IPD50R950CEBTMA1

MOSFET N-CH 500V 4.3A PG-TO252
IPD50R950CEBTMA1 P1
IPD50R950CEBTMA1 P1
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Infineon Technologies ~ IPD50R950CEBTMA1

Part Number
IPD50R950CEBTMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 500V 4.3A PG-TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPD50R950CEBTMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 12104 pcs
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Product Parameter

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Part Number IPD50R950CEBTMA1
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 950 mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 231pF @ 100V
FET Feature Super Junction
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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