IPD06N03LA G

MOSFET N-CH 25V 50A DPAK
IPD06N03LA G P1
IPD06N03LA G P1
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Infineon Technologies ~ IPD06N03LA G

Part Number
IPD06N03LA G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 25V 50A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD06N03LA G.pdf IPD06N03LA G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IPD06N03LA G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 2653pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 30A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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