Images are for reference only.
See Product Specifications for product details.
| Part Number | IPB50R299CPATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 550V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 6.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPB50R140CP | Infineon Technologies | MOSFET N-CH 550V 23A TO-263 | - | 0 | Details |
 |
IPB50R140CPATMA1 | Infineon Technologies | MOSFET N-CH 550V 23A TO-263 | - | 26587 | Details |
 |
IPB50R199CPATMA1 | Infineon Technologies | MOSFET N-CH 550V 17A TO-263 | - | 0 | Details |
 |
IPB50R250CPATMA1 | Infineon Technologies | MOSFET N-CH 550V 13A TO-263 | - | 0 | Details |
 |
IPB50R299CPATMA1 | Infineon Technologies | MOSFET N-CH 550V 12A TO-263 | - | 0 | Details |