Images are for reference only.
See Product Specifications for product details.
| Part Number | IPB160N04S3H2ATMA1 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IPB160N04S203ATMA1 | Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 | 0 | Details | |
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IPB160N04S203ATMA4 | Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 | 0 | Details | |
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IPB160N04S2L03ATMA1 | Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 | 0 | Details | |
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IPB160N04S2L03ATMA2 | Infineon Technologies | MOSFET N-CH TO262-7 | 0 | Details | |
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IPB160N04S3-H2 | Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 | 0 | Details | |
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IPB160N04S3H2ATMA1 | Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 | 2000 | Details | |
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IPB160N04S4H1ATMA1 | Infineon Technologies | MOSFET N-CH 40V 160A TO263-7 | 2000 | Details | |
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IPB160N04S4LH1ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | 0 | Details | |
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IPB160N08S403ATMA1 | Infineon Technologies | MOSFET N-CH TO263-7 | 0 | Details |