IGOT60R070D1AUMA1

IC GAN FET 600V 60A 20DSO
IGOT60R070D1AUMA1 P1
IGOT60R070D1AUMA1 P1
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Infineon Technologies ~ IGOT60R070D1AUMA1

Part Number
IGOT60R070D1AUMA1
Manufacturer
Infineon Technologies
Description
IC GAN FET 600V 60A 20DSO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IGOT60R070D1AUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 3692 pcs
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Product Parameter

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Part Number IGOT60R070D1AUMA1
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 400V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-DSO-20-87
Package / Case 20-PowerSOIC (0.433", 11.00mm Width)

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