Images are for reference only.
See Product Specifications for product details.
| Part Number | IDC08S60CEX1SA2 |
|---|---|
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 8A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 600V |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
IDC08D120T6MX1SA2 | Infineon Technologies | DIODE GEN PURP 1.2KV 10A WAFER | - | 43906 | Details |
|
IDC08S120EX1SA3 | Infineon Technologies | DIODE SCHOTTKY 1200V 7.5A DIE | 0 | Details | |
|
IDC08S120EX7SA1 | Infineon Technologies | DIODE SCHOTTKY 1200V 7.5A DIE | - | 0 | Details |
|
IDC08S60CEX1SA2 | Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | 0 | Details | |
|
IDC08S60CEX1SA3 | Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | 0 | Details | |
|
IDC08S60CEX7SA1 | Infineon Technologies | DIODE GEN PURPOSE SAWN WAFER | 0 | Details |