Images are for reference only.
See Product Specifications for product details.
| Part Number | BSS87E6327T |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 240V |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 108µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 97pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 260mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT89-4-2 |
| Package / Case | TO-243AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
BSS806NEH6327XTSA1 | Infineon Technologies | MOSFET N-CH 20V 2.3A SOT23 | 9000 | Details | |
 |
BSS806NH6327XTSA1 | Infineon Technologies | MOSFET N-CH 20V 2.3A SOT23 | - | 21000 | Details |
 |
BSS806NL6327HTSA1 | Infineon Technologies | MOSFET N-CH 20V 2.3A SOT23 | 0 | Details | |
 |
BSS816NW L6327 | Infineon Technologies | MOSFET N-CH 20V 1.4A SOT323 | 0 | Details | |
 |
BSS816NWH6327XTSA1 | Infineon Technologies | MOSFET N-CH 20V 1.4A SOT323 | 0 | Details | |
 |
BSS83,215 | NXP USA Inc. | MOSFET N-CH 10V 50MA SOT-143B | - | 0 | Details |
 |
BSS83,235 | NXP USA Inc. | MOSFET N-CH 10V 50MA SOT143 | - | 0 | Details |
 |
BSS83PE6327 | Infineon Technologies | MOSFET P-CH 60V 330MA SOT-23 | 0 | Details | |
 |
BSS83PH6327XTSA1 | Infineon Technologies | MOSFET P-CH 60V 0.33A SOT23 | 66000 | Details | |
 |
BSS83PL6327HTSA1 | Infineon Technologies | MOSFET P-CH 60V 0.33A SOT23 | 0 | Details | |
 |
BSS84 | Fairchild/Micross Components | DIE TRANS P-CH SMALL SIGNAL | - | 0 | Details |
 |
BSS84,215 | Nexperia USA Inc. | MOSFET P-CH 50V 130MA SOT-23 | 78000 | Details |