BSP316PE6327T

MOSFET P-CH 100V 0.68A SOT223
BSP316PE6327T P1
BSP316PE6327T P1
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Infineon Technologies ~ BSP316PE6327T

Part Number
BSP316PE6327T
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 100V 0.68A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSP316PE6327T.pdf BSP316PE6327T PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSP316PE6327T
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 680mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Rds On (Max) @ Id, Vgs 1.8 Ohm @ 680mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA

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