BSG0811NDATMA1

MOSFET 2N-CH 25V 19A/41A 8TISON
BSG0811NDATMA1 P1
BSG0811NDATMA1 P1
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Infineon Technologies ~ BSG0811NDATMA1

Part Number
BSG0811NDATMA1
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 25V 19A/41A 8TISON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSG0811NDATMA1.pdf BSG0811NDATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number BSG0811NDATMA1
Part Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 41A
Rds On (Max) @ Id, Vgs 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 12V
Power - Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8

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