BSC900N20NS3 G

MOSFET N-CH 200V 15.2A 8TDSON
BSC900N20NS3 G P1
BSC900N20NS3 G P1
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Infineon Technologies ~ BSC900N20NS3 G

Part Number
BSC900N20NS3 G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 200V 15.2A 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC900N20NS3 G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 10000 pcs
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Product Parameter

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Part Number BSC900N20NS3 G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 15.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Rds On (Max) @ Id, Vgs 90 mOhm @ 7.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

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