BSC252N10NSFGATMA1

MOSFET N-CH 100V 40A TDSON-8
BSC252N10NSFGATMA1 P1
BSC252N10NSFGATMA1 P1
Images are for reference only.
See Product Specifications for product details.

Infineon Technologies ~ BSC252N10NSFGATMA1

Part Number
BSC252N10NSFGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 40A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC252N10NSFGATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 5000 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number BSC252N10NSFGATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta), 40A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 78W (Tc)
Rds On (Max) @ Id, Vgs 25.2 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

Related Products

All Products