BSC200P03LSGAUMA1

MOSFET P-CH 30V 12.5A TDSON-8
BSC200P03LSGAUMA1 P1
BSC200P03LSGAUMA1 P1
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Infineon Technologies ~ BSC200P03LSGAUMA1

Part Number
BSC200P03LSGAUMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 30V 12.5A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC200P03LSGAUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSC200P03LSGAUMA1
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 48.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2430pF @ 15V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs 20 mOhm @ 12.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

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