BSC084P03NS3EGATMA1

MOSFET P-CH 30V 14.9A TDSON-8
BSC084P03NS3EGATMA1 P1
BSC084P03NS3EGATMA1 P1
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Infineon Technologies ~ BSC084P03NS3EGATMA1

Part Number
BSC084P03NS3EGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 30V 14.9A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC084P03NS3EGATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSC084P03NS3EGATMA1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 57.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 15V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs 8.4 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

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