BSC066N06NSATMA1

MOSFET N-CH 60V 64A 8TDSON
BSC066N06NSATMA1 P1
BSC066N06NSATMA1 P1
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Infineon Technologies ~ BSC066N06NSATMA1

Part Number
BSC066N06NSATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 64A 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSC066N06NSATMA1.pdf BSC066N06NSATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSC066N06NSATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs 6.6 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

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