HGTD1N120BNS9A

IGBT 1200V 5.3A 60W TO252AA
HGTD1N120BNS9A P1
HGTD1N120BNS9A P2
HGTD1N120BNS9A P1
HGTD1N120BNS9A P2
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Fairchild/ON Semiconductor ~ HGTD1N120BNS9A

Part Number
HGTD1N120BNS9A
Manufacturer
Fairchild/ON Semiconductor
Description
IGBT 1200V 5.3A 60W TO252AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- HGTD1N120BNS9A PDF online browsing
Family
Transistors - IGBTs - Single
  • In Stock : 5000 pcs
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Product Parameter

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Part Number HGTD1N120BNS9A
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 5.3A
Current - Collector Pulsed (Icm) 6A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A
Power - Max 60W
Switching Energy 70µJ (on), 90µJ (off)
Input Type Standard
Gate Charge 14nC
Td (on/off) @ 25°C 15ns/67ns
Test Condition 960V, 1A, 82 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA

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