FQD4N20LTM

MOSFET N-CH 200V 3.2A DPAK
FQD4N20LTM P1
FQD4N20LTM P2
FQD4N20LTM P1
FQD4N20LTM P2
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Fairchild/ON Semiconductor ~ FQD4N20LTM

Part Number
FQD4N20LTM
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 200V 3.2A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
FQD4N20LTM.pdf FQD4N20LTM PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number FQD4N20LTM
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 5V, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs 1.35 Ohm @ 1.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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