EPC2101

GAN TRANS ASYMMETRICAL HALF BRID
EPC2101 P1
EPC2101 P1
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See Product Specifications for product details.

EPC ~ EPC2101

Part Number
EPC2101
Manufacturer
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- EPC2101 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 13795 pcs
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Product Parameter

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Part Number EPC2101
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V, 1200pF @ 30V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

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