Images are for reference only.
See Product Specifications for product details.
| Part Number | ZXMN10B08E6TA |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.3V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 497pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 230 mOhm @ 1.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-26 |
| Package / Case | SOT-23-6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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ZXMN10A07FTA | Diodes Incorporated | MOSFET N-CH 100V 700MA SOT23-3 | - | 3000 | Details |
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ZXMN10A07FTC | Diodes Incorporated | MOSFET N-CH 100V 700MA SOT23-3 | - | 0 | Details |
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ZXMN10A07ZTA | Diodes Incorporated | MOSFET N-CH 100V 1A SOT-89 | - | 5000 | Details |
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ZXMN10A08DN8TA | Diodes Incorporated | MOSFET 2N-CH 100V 1.6A 8-SOIC | - | 0 | Details |
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ZXMN10A08DN8TC | Diodes Incorporated | MOSFET 2N-CH 100V 1.6A 8SOIC | - | 0 | Details |
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ZXMN10A08E6TA | Diodes Incorporated | MOSFET N-CH 100V 1.5A SOT-23-6 | - | 0 | Details |
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ZXMN10A08E6TC | Diodes Incorporated | MOSFET N-CH 100V 1.5A SOT23-6 | - | 0 | Details |
 |
ZXMN10A08GTA | Diodes Incorporated | MOSFET N-CH 100V 2A SOT223 | - | 106000 | Details |
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ZXMN10A09KTC | Diodes Incorporated | MOSFET N-CH 100V 5A DPAK | - | 0 | Details |
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ZXMN10A11GTA | Diodes Incorporated | MOSFET N-CH 100V 1.7A SOT223 | 0 | Details | |
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ZXMN10A11GTC | Diodes Incorporated | MOSFET N-CH 100V 1.7A SOT223 | 0 | Details | |
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ZXMN10A11K | Diodes Incorporated | MOSFET N-CH 100V 2.4A DPAK | - | 0 | Details |